Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs/InP MQWs on InP

Eric D. Jones; Nobuo Kotera; Tomoyoshi Mishima; Hisato Nakamura; Noboru Miura; Chris P. Tigges

doi:10.1117/12.275595

6 June 1997 Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs/InP MQWs on InP

Eric D. Jones, Nobuo Kotera, Tomoyoshi Mishima, Hisato Nakamura, Noboru Miura, Chris P. Tigges

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275595
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

A knowledge of the energy-band energies and masses are important parameters for the design of semiconductor lasers and light-emitting diodes. We present results of a magnetoluminescence study on n-type InGaAs/InAlAs multiple quantum wells lattice matched to InP. From an analysis of low-temperature magnetoluminescence data, a simultaneous measurement of the in-plane conduction and valence-band masses is made. We find, assuming parabolic bands, that the conduction and valence-band masses are respectively m_c approximately equals 0.069 m₀ and m_v approximately equals 0.061 m₀, where m₀ is the free electron mass. Fitting a nonparabolic conduction-band dispersion curve to the data yields a zone- center mass m_c approximately equals 0.056 m₀ and m_v approximately 0.102 m₀.

Citation Download Citation

Eric D. Jones, Nobuo Kotera, Tomoyoshi Mishima, Hisato Nakamura, Noboru Miura, and Chris P. Tigges "Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs/InP MQWs on InP", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275595

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