VCSEL array fabricated by selective etching and selective oxidation

ShiMing Lin; Xuejun Kang; Qiming Wang; Junhua Gao; Honghai Gao; Hongjie Wang; Lixuan Wang; Chunhui Zhang

doi:10.1117/12.251895

24 September 1996 VCSEL array fabricated by selective etching and selective oxidation

ShiMing Lin, Xuejun Kang, Qiming Wang, Junhua Gao, Honghai Gao, Hongjie Wang, Lixuan Wang, Chunhui Zhang

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251895
Event: Photonics China '96, 1996, Beijing, China

Abstract

The effects of the thickness of the oxidized layer, reaction temperature and carrier gas flow on the oxidation rate of Al_xGa_1-xAs-AlAs-GaAs heterostructures are presented. The electrically-pumped GaAs/AlGaAs vertical cavity surface emitting laser 2D arrays fabricated by selective etching and selective oxidation are described. The square current flow aperture of 4 X 4 micrometers ² are formed by the buried oxidized AlAs layers formed on both top and bottom distributed Bragg reflectors adjacent active region. The serious resistance of the devices are 60 to 80 (Omega) . The continuous-wave threshold current as low as 3.8mA is obtained at room temperature. The devices show the maximum output power over 1mW. Their angles of divergence are less than 7.8 degrees and the pulse rise times are less than 100ps in the high speed pulse response measurements. The 2 X 3 2D arrays are obtained. The thresholds of devices in the array are within 6 +/- 0.5 mA.

Citation Download Citation

ShiMing Lin, Xuejun Kang, Qiming Wang, Junhua Gao, Honghai Gao, Hongjie Wang, Lixuan Wang, and Chunhui Zhang "VCSEL array fabricated by selective etching and selective oxidation", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251895

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