Metal-induced charge and growth rate of ultrathin thermal oxide films grown on Al or Fe contaminated Si (100) surfaces

Hirofumi Shimizu; Alison Shull; Chusuke Munakata

doi:10.1117/12.250931

13 September 1996 Metal-induced charge and growth rate of ultrathin thermal oxide films grown on Al or Fe contaminated Si (100) surfaces

Hirofumi Shimizu, Alison Shull, Chusuke Munakata

Author Affiliations +

Proceedings Volume 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III; (1996) https://doi.org/10.1117/12.250931
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

This paper first describes how growth rate of ultra-thin thermal oxide and oxide charges are influenced by an incorporation of Al and/or Fe into SiO₂. Al and Fe in SiO₂ enhanced the oxide growth rate at an early stage of thermal oxidation, while they reduced it around 10 percent in several hundreds minutes at 1123 K. In thermally oxidized Al- or Fe-contaminated p-type Si, observed ac surface photovoltages (SPVs) showed that the positive fixed oxide charge (Q_f) was compensated by the induction of a negative charge which was already proposed by the conceptual model positing that (AlOSi)^- and (FeOSi)^- networks are formed in SiO₂. During thermal oxidation, the Al and Fe existing in the native oxide were left behind at the very top of the SiO₂ causing a metal-induced negative charge. In the course of thermal oxidation of Al- contaminated Si wafers, the net oxide charge has diminished in n-type Si, while it has increased in p-type Si. This is possibly because the Al suboxides, for example, in the thinnest oxides changed into Al₂O₃ in thicker oxide, resulting in losing the negative charge. The Al-induced negative charge in SiO₂ might enhance oxide growth at an early stage of oxidation by compensating the positive Q_f. Furthermore, in oxidized n-type Si, a new idea is proposed that most part of positive Q_f originating in Si dangling bond may be effectively neutralized by abundant electrons in n-type Si.

Citation Download Citation

Hirofumi Shimizu, Alison Shull, and Chusuke Munakata "Metal-induced charge and growth rate of ultrathin thermal oxide films grown on Al or Fe contaminated Si (100) surfaces", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); https://doi.org/10.1117/12.250931

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