Tracing metal defect relating to yield for VLSI manufacturing

Yi-Chuan Lo; Chih-Hsiung Lee; Chuan-Chieh A. Lin; Chi-Ming Yang; Chuan-Chang Lin; Kuo-Liang Lu; J. J. Yang

doi:10.1117/12.250913

13 September 1996 Tracing metal defect relating to yield for VLSI manufacturing

Yi-Chuan Lo, Chih-Hsiung Lee, Chuan-Chieh A. Lin, Chi-Ming Yang, Chuan-Chang Lin, Kuo-Liang Lu, J. J. Yang

Proceedings Volume 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II; (1996) https://doi.org/10.1117/12.250913
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

Particles from four stages: prior to metal sputter, after metal sputter, metal photo (ADI) and metal etching (AEI) were detected with KLA inspection tool. Different type defect counts at four stages were discussed in detail. Correlation of die yield and visual defect are analyzed. Also a technical megasonic clean prior to metal sputter which expected to reduced particles during the metal process is discussed. Experimental result shows 53.78% of the visual defects were caused prior to metal sputter, 25% occurs at metal sputter, 13.64% occurs at metal photo and 7.58% occurs at metal etching, respectively. According to the yield sorting results, 40% of visual defect which occurs prior to metal sputter, 25% at metal sputter, 83% at metal photo and 80% at metal etching are considered killer defects, respectively. Megasonic clean before metal sputter cannot reduce particle, even cause yield 3 - 8% drop due to contact resistance rising. All the evidence point out the yield impact relating particle contributed by each stage cannot be ignored.

Citation Download Citation

Yi-Chuan Lo, Chih-Hsiung Lee, Chuan-Chieh A. Lin, Chi-Ming Yang, Chuan-Chang Lin, Kuo-Liang Lu, and J. J. Yang "Tracing metal defect relating to yield for VLSI manufacturing", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); https://doi.org/10.1117/12.250913

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