Paper
13 September 1996 SPC qualification strategy for CD metrology
Elizabeth E. Chain, Martin G. Ridens, James P. Annand
Author Affiliations +
Abstract
Effective statistical process control (SPC) necessitates the use of the proper control chart, used to monitor and control the important process characteristics. The control chart can be used to monitor stability for a process which is normally distributed. Scanning electron microscopy (SEM) critical dimension (CD) measurement, however, shows a systematic variation in repeated measurements of a sample in addition to the Gaussian variation, due to the nature of electron beam irradiation of materials. Because of this systematic variation the standard control charts do not work well for the control of this process. Addition of a slope-subtraction algorithm to the data collection system provides display of the slope-corrected data in addition to the raw data display, and permits the stability of the metrology tool to be demonstrated.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elizabeth E. Chain, Martin G. Ridens, and James P. Annand "SPC qualification strategy for CD metrology", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); https://doi.org/10.1117/12.250906
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Cited by 3 scholarly publications.
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KEYWORDS
Scanning electron microscopy

Semiconducting wafers

Process control

Critical dimension metrology

Metrology

Control systems

Optical alignment

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