Initial plasma oxidation of silicon studied by real-time ellipsometry

Masahiro Kitajima; I. Kamioka; T. Kurashina; Keikichi G. Nakamura

doi:10.1117/12.246232

16 August 1996 Initial plasma oxidation of silicon studied by real-time ellipsometry

Masahiro Kitajima, I. Kamioka, T. Kurashina, Keikichi G. Nakamura

Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246232
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan

Abstract

We have studied plasma oxidation of silicon surfaces using real-time ellipsometry. The real time observation shows a strong dependence of the plasma oxidation on the plasma density and dc bias. The results clearly reveal that the direction reaction of both positively and negatively charged species with the silicon surface dominates the plasma oxidation process in the ultra thin oxide film region. The effects of temperature and surface orientation of the substrate are also discussed.

Citation Download Citation

Masahiro Kitajima, I. Kamioka, T. Kurashina, and Keikichi G. Nakamura "Initial plasma oxidation of silicon studied by real-time ellipsometry", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246232

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