Infrared response of silicide Schottky barrier detectors formed from mixed Pt/Ir layers on Si

Peter Lahnor; R. Schmiedl; Dieter Woerle; Volker Demuth; Max J. Schulz

doi:10.1117/12.255168

22 October 1996 Infrared response of silicide Schottky barrier detectors formed from mixed Pt/Ir layers on Si

Peter Lahnor, R. Schmiedl, Dieter Woerle, Volker Demuth, Max J. Schulz

Proceedings Volume 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices; (1996) https://doi.org/10.1117/12.255168
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Mixed Pt/IR silicide Schottky barrier detectors are studied for operation in the 3 - 5 micrometer wavelength range. Thin films (2 - 10 nm) consisting of mixed Pt and IR layer sequences were deposited onto p-Si(100) substrates by e-beam evaporation in high vacuum (10^-6 mbar). The deposited metal films were annealed in a lamp heater at 500 degrees Celsius for 30 min to obtain complete silicide formation. The resulting films were characterized by depth- sensitive methods (RBS and crater edge AES) as well as by current-voltage and photocurrent measurements. We found an enrichment of Pt at the silicide-silicon interface of all the films, caused by the enhanced silicidation reactivity of Pt-Si compared to that of IR-Si. A Schottky barrier height typical for PtSi was generally observed even for mixed layers. Only samples processed by IR deposition and silicidation prior to the Pt evaporation, showed an adjustable shift of the Schottky barrier height covering the whole range between the height of IRSi and that of PtSi (150 - 230 meV). The infrared responsivity of these films exceeded that of pure PtSi films.

Citation Download Citation

Peter Lahnor, R. Schmiedl, Dieter Woerle, Volker Demuth, and Max J. Schulz "Infrared response of silicide Schottky barrier detectors formed from mixed Pt/Ir layers on Si", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); https://doi.org/10.1117/12.255168

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