Paper
18 October 1996 Photoconductive HgCdTe detector assemblies for the GOES imager and sounder instruments
Jeanne M. Hartley, Marion B. Reine, C. Lynne Terzis, Anthony J. Verrilli, Richard A. Hassler, Edward P. Lesondak
Author Affiliations +
Abstract
The GOES Imager and Sounder instruments each utilize several HgCdTe photoconductive (PC) detectors and detector arrays for detection over the 6.5 to 14.7 micrometers region. These high performance detectors are integrated with germanium aplanat lenses and mounted in miniature hermetically sealed housings. There are demanding requirements on the radiometric performance of these detector assemblies. For LW Sounder detectors, the highest possible sensitivity achievable by a practical HgCdTe photoconductor at the operating temperatures of 100 to 105 K was required. Lockheed Martin designed, fabricated, tested, packaged, qualified, and delivered 7 of the 11 HgCdTe PC detector assemblies for GOES-8, and 9 of the 11 assemblies for GOES- 9. All the n-type HgCdTe starting material was grown at Lockheed Martin.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeanne M. Hartley, Marion B. Reine, C. Lynne Terzis, Anthony J. Verrilli, Richard A. Hassler, and Edward P. Lesondak "Photoconductive HgCdTe detector assemblies for the GOES imager and sounder instruments", Proc. SPIE 2812, GOES-8 and Beyond, (18 October 1996); https://doi.org/10.1117/12.254096
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KEYWORDS
Sensors

Imaging systems

Mercury cadmium telluride

Sensor performance

Lithium

Performance modeling

Semiconducting wafers

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