MBE flexible manufacturing for HgCdTe focal plane arrays

J. David Benson; John H. Dinan; James R. Waterman; Christopher J. Summers; Rudolph G. Benz II; Brent K. Wagner; S. D. Pearson; Ashesh Parikh; John E. Jensen; Owen K. Wu; Rajesh D. Rajavel; G. S. Kamath; Karl A. Harris; Steven R. Jost; Jose M. Arias; Lester J. Kozlowski; Majid Zandian; Jagmohan Bajaj; Kadri Vural; Roger E. DeWames; Charles A. Cockrum; G. M. Venzor; Scott M. Johnson; H.-D. Shih; M. J. Bevan; J. A. Dodge; Art Simmons

doi:10.1117/12.243457

27 June 1996 MBE flexible manufacturing for HgCdTe focal plane arrays

J. David Benson, John H. Dinan, James R. Waterman, Christopher J. Summers, Rudolph G. Benz II, Brent K. Wagner, S. D. Pearson, Ashesh Parikh, John E. Jensen, Owen K. Wu, Rajesh D. Rajavel, G. S. Kamath, Karl A. Harris, Steven R. Jost, Jose M. Arias, Lester J. Kozlowski, Majid Zandian, Jagmohan Bajaj, Kadri Vural, Roger E. DeWames, Charles A. Cockrum, G. M. Venzor, Scott M. Johnson, H.-D. Shih, M. J. Bevan, J. A. Dodge, Art Simmons

Author Affiliations +

Proceedings Volume 2744, Infrared Technology and Applications XXII; (1996) https://doi.org/10.1117/12.243457
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

To achieve the DoD objective of low cost high performance infrared focal plane arrays a manufacturing technique is required which is intrinsically flexible with respect to device configuration and cutoff wavelength and easily scaleable with respect to volume requirements. The approach adopted is to fully develop the technology of molecular beam epitaxy (MBE) to a level where detector array wafers with a variety of configurations can be fabricated with first pass success at a reduced cost. As a vapor phase process, MBE lends itself directly to: (1) the inclusion of real-time monitoring and process control, (2) a single or multiple wafer growth mode, (3) nearly instantaneous changes in growth parameters. A team has been assembled to carry out the program. It is composed of four industrial organizations -- Rockwell International, Hughes Aircraft Company, Texas Instruments, and Lockheed-Martin, and a university -- Georgia Tech Research Institute. Since team members are committed suppliers and users of IRFPAs, technology transfer among team members is accomplished in real-time. The technical approach has been focused on optimizing the processes necessary to fabricate p-on-n HgCdTe double layer heterostructure focal plane arrays, reducing process variance, and on documenting flexibility with respect to cutoff wavelength. Two device structures have been investigated and fabricated -- a 480 by 4 and a 128 by 128.

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J. David Benson, John H. Dinan, James R. Waterman, Christopher J. Summers, Rudolph G. Benz II, Brent K. Wagner, S. D. Pearson, Ashesh Parikh, John E. Jensen, Owen K. Wu, Rajesh D. Rajavel, G. S. Kamath, Karl A. Harris, Steven R. Jost, Jose M. Arias, Lester J. Kozlowski, Majid Zandian, Jagmohan Bajaj, Kadri Vural, Roger E. DeWames, Charles A. Cockrum, G. M. Venzor, Scott M. Johnson, H.-D. Shih, M. J. Bevan, J. A. Dodge, and Art Simmons "MBE flexible manufacturing for HgCdTe focal plane arrays", Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); https://doi.org/10.1117/12.243457

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