410K pixel PtSi Schottky-barrier infrared CCD image sensor

Masahiro Shoda; Keiichi Akagawa; Tsuneyuki Kazama

doi:10.1117/12.243478

27 June 1996 410K pixel PtSi Schottky-barrier infrared CCD image sensor

Masahiro Shoda, Keiichi Akagawa, Tsuneyuki Kazama

Proceedings Volume 2744, Infrared Technology and Applications XXII; (1996) https://doi.org/10.1117/12.243478
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

We developed an 811 by 508-element monolithic focal plane array detector using a PtSi Schottky-barrier photodiode, which has the greatest number of pixels for the Standard TV format. This detector array uses an interlined CCD configuration and 1.0-micron design rules. The pixel size of this detector was 18 by 21 microns square. From many experiments, the process conditions needed for obtaining the high responsivity were determined. To obtain high responsivity, we focused on two important aspects. The first one was an effective fill factor, and the second one was the properties of the PtSi Schottky barrier. Applying the new procedure to the wafer fabrication process, we reduced the nonactive portion of the pixel and obtained the ideal optical cavity structure. This new procedure was also a damage-free process, so good PtSi Schottky-barrier properties were obtained, which is related to the second aspect. We investigated the dependence of Schottky-barrier height on Pt deposition substrate temperature. Based on the results of the investigation, typical (Phi) b (Schottky- barrier height) and typical C₁ (quantum efficiency coefficient) of 0.22 eV and 0.28/eV, respectively, were obtained. The NETD (noise equivalent temperature difference), calculated as the ratio of noise to response, was 0.06 K. The responsivity nonuniformity was estimated to be 0.45%. These measurements were done for a scene temperature of 300 K, f/1.2 cold shield, a 3 micrometer- long-wavelength pass filter, and 1/60-second integration time. Excellent thermal imaging was obtained without uniformity correction. We also show that the combination of electrical shutter operation and ND filter is suitable for high-temperature measurement.

Citation Download Citation

Masahiro Shoda, Keiichi Akagawa, and Tsuneyuki Kazama "410K pixel PtSi Schottky-barrier infrared CCD image sensor", Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); https://doi.org/10.1117/12.243478

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available