KrF step-and-scan exposure system using higher-NA projection lens

Kazuaki Suzuki; Shinji Wakamoto; Kenji Nishi

doi:10.1117/12.240938

7 June 1996 KrF step-and-scan exposure system using higher-NA projection lens

Kazuaki Suzuki, Shinji Wakamoto, Kenji Nishi

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240938
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A KrF step and scan exposure system using a projection lens has been developed. The exposure field is 25mm by 33mm which is large enough to fit two 256Mbit DRAM chips. The maximum numerical aperture is 0.6 and the maximum coherence factor of the illumination system is 0.75 for the maximum numerical aperture. Original design concepts for scanning technologies are introduced. Actual data of the system indicate the sufficient performance for 250nm design rule device production.

Citation Download Citation

Kazuaki Suzuki, Shinji Wakamoto, and Kenji Nishi "KrF step-and-scan exposure system using higher-NA projection lens", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240938

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