Influence of process latitude on exposure characteristics

Minoru Sugawara; Hiroichi Kawahira; Satoru Nozawa

doi:10.1117/12.240932

7 June 1996 Influence of process latitude on exposure characteristics

Minoru Sugawara, Hiroichi Kawahira, Satoru Nozawa

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240932
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Influence of process latitude on exposure characteristics is systematically investigates by using exposure-defocus and mask fabrication latitude methodology. It will be shown how wafer line width tolerance contributes to influence of exposure and mask line width latitudes on depth of focus (DOF) for several elemental patterns. For three test patterns, DOF process latitude functions which describe pattern fidelity are used to evaluate influence of the process latitudes. It will be concluded that larger wafer line width tolerance significantly decreases influence of the exposure and mask line width latitudes on DOFs.

Citation Download Citation

Minoru Sugawara, Hiroichi Kawahira, and Satoru Nozawa "Influence of process latitude on exposure characteristics", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240932

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