Paper
7 June 1996 Evaluation of proximity effects using three-dimensional optical lithography simulation
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Abstract
The use of optical lithography modeling as a tool for evaluating proximity effects is described. An extension of the critical dimension error for a one-dimensional mask feature to a critical shape error for a two-dimensional mask feature is presented. Simulation is applied to the evaluation of mask shaping (also called optical proximity correction) using the critical shape error as a metric.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Mack "Evaluation of proximity effects using three-dimensional optical lithography simulation", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240928
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Cited by 9 scholarly publications.
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KEYWORDS
Optical proximity correction

Photomasks

Photoresist materials

Optical lithography

Error analysis

Lithography

Optical simulations

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