Substrate effects of silicon nitride on i-line and deep-UV lithography

Byeong-Chan Kim; Hoon Huh; Jaejeong Kim

doi:10.1117/12.241811

14 June 1996 Substrate effects of silicon nitride on i-line and deep-UV lithography

Byeong-Chan Kim, Hoon Huh, Jaejeong Kim

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241811
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Thin films of silicon nitride (Si₃N₄) which has been taking a crucial role as an etch or oxidation barrier specially in the local oxidation of silicon (LOCOS) process affect optical lithographic performances seriously. In this study, substrate effects of Si₃N₄ were delved through two kinds of points of view. Thin films underlying below the photoresist have induced thin-film interference effects which have caused in turn the degradation of the fidelity of the pattern transfer in i-line lithography. Recently, the chemically amplified resists mainly applied in DUV lithography have been revealed vulnerable to the chemical contamination from the substrate as well as the optical disturbances. We investigated the substrate effects of Si₃N₄ thin films which represent the optical and the chemical effects simultaneously to the chemically amplified resists, in which the optical aspect and the chemical influences were studied separately. Consequently, we determined the optimum thickness of Si₃N₄ substrate to reduce the thin-film interference effects and contrived the favorable methods for the chemical passivation of Si₃N₄ substrate which was confirmed to be effective with the quantification of chemical state at the surface.

Citation Download Citation

Byeong-Chan Kim, Hoon Huh, and Jaejeong Kim "Substrate effects of silicon nitride on i-line and deep-UV lithography", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241811

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