Paper
14 June 1996 Removable organic antireflection coating
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Abstract
Preliminary studies with Brewer Science CD9 ARC have shown that high-intensity ultraviolet exposure results in significant changes in film properties, including thickness, plasma etch resistance, and develop rate. This process has been studied over a range of temperatures and exposure conditions, and their results are interpreted in terms of competing polymer main chain scission and crosslinking reactions. The process represents a path to improved etch performance, and the possibility exists for use of Brewer ARC in a bi-layer portable conformable mask resist scheme.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John L. Sturtevant, Linda J. Insalaco, Tony D. Flaim, Vandana N. Krishnamurthy, James D. Meador, John S. Petersen, and Andrew R. Eckert "Removable organic antireflection coating", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241872
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Cited by 2 scholarly publications.
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KEYWORDS
Etching

Semiconducting wafers

Absorption

Antireflective coatings

Photoresist materials

Plasma etching

Deep ultraviolet

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