Paper
14 June 1996 Patterning ULSI Circuits
Author Affiliations +
Abstract
The traditional scaling of feature sized to ever smaller dimensions which has driven the semiconductor industry for 30 years is being challenged by physical and cost limits. As we approach the development of the 180-nm generation, we have a quite different technology scenario facing us than we have seen in the past. The approaches being contemplated can be summarized in order of utility as (1) extensions of existing patterning methods, (2) nonlithography patterning approaches, (3) extensions of the optical projection/reduction approach, (4) new beam techniques, and (5) probe techniques. I will review the challenges in each of these categories and indicate where serious development efforts are needed to sustain technology scaling into the ULSI generations.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John R. Carruthers "Patterning ULSI Circuits", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241809
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Optical lithography

Critical dimension metrology

Photoresist processing

Reflectivity

Excimer lasers

Image processing

RELATED CONTENT

High-numerical-aperture I-line stepper
Proceedings of SPIE (June 01 1990)
Patterning ULSI circuits
Proceedings of SPIE (May 21 1996)
Patterning ULSI circuits
Proceedings of SPIE (May 27 1996)
Patterning ULSI circuits
Proceedings of SPIE (June 07 1996)

Back to Top