Halation reduction for single-layer DUV resist processing

Hiroshi Yoshino; Toshiro Itani; Shuichi Hashimoto; Mitsuharu Yamana; Norihiko Samoto; Kunihiko Kasama

doi:10.1117/12.241819

14 June 1996 Halation reduction for single-layer DUV resist processing

Hiroshi Yoshino, Toshiro Itani, Shuichi Hashimoto, Mitsuharu Yamana, Norihiko Samoto, Kunihiko Kasama

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241819
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

In order to apply single layer resist processing to 0.25-micrometer patterning, the effect of topography was studied in KrF excimer laser lithography, using a two-dimensional resist profile simulator with vector model. In particular, we simulated resist transmittance dependence on depth of focus (DOF) and halation, by considering a conventional (non- bleaching type) DUV chemically amplified positive resist. Here, we varied the step angle of the topographic substrate (height 0.1 micrometer) and the distance between step and resist pattern. Moreover, we investigated the influence of two optical resist characteristics, photo- bleaching and photo-coloring, from the viewpoint of halation reduction. For a highly reflective substrate such as polysilicon, the optimum transmittance (DOF greater than or equal to 1.0 micrometer) of the non-bleaching type resist with a resist thickness of 0.7 micrometer was determined to be 40 - 50%. In such a non-bleaching type resist, a good profile was obtained when the distance between the step and the resist pattern edge was more than 0.3 micrometers. Moreover, it was found that photo-coloring in the resist film was effective for halation reduction.

Citation Download Citation

Hiroshi Yoshino, Toshiro Itani, Shuichi Hashimoto, Mitsuharu Yamana, Norihiko Samoto, and Kunihiko Kasama "Halation reduction for single-layer DUV resist processing", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241819

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