Effect of oxygen deposition pressure and temperature on the structure and properties of pulsed laser-deposited La0.67Ca0.33MnOd films

James S. Horwitz; Paul C. Dorsey; N. C. Koon; M. Rubinstein; J. M. Byers; D. J. Gillespie; Michael S. Osofsky; V. G. Harris; K. S. Grabowski; D. L. Knies; Edward P. Donovan; Randolph E. Treece; Douglas B. Chrisey

doi:10.1117/12.237760

8 April 1996 Effect of oxygen deposition pressure and temperature on the structure and properties of pulsed laser-deposited La_0.67Ca_0.33MnO_δ films

James S. Horwitz, Paul C. Dorsey, N. C. Koon, M. Rubinstein, J. M. Byers, D. J. Gillespie, Michael S. Osofsky, V. G. Harris, K. S. Grabowski, D. L. Knies, Edward P. Donovan, Randolph E. Treece, Douglas B. Chrisey

Author Affiliations +

Proceedings Volume 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics; (1996) https://doi.org/10.1117/12.237760
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The effect of substrate temperature and oxygen deposition pressure on the structure and properties of thin films of La_xCa_1-xMnO_(delta ) has been investigated. Thin films (approximately 1000 angstroms) of La_0.67Ca_0.33MnO_(delta ) were deposited onto LaAlO₃ (100) substrates by pulsed laser deposition at a substrate temperature of 600 and 700 degree(s)C. A series of films were grown on different oxygen pressures, between 15 and 400 mTorr, which systematically changed the oxygen concentrations in the films. As-deposited films exhibited an oriented orthorhombic structure. At low oxygen deposition pressures films were preferentially (202) oriented. At high pressures deposited films had a (040) preferred orientation. A 900 degree(s)C anneal in flowing oxygen of a film deposited at low oxygen pressure resulted in a decrease in the a lattice parameter and a change in the preferred orientation from (202) to (040). Vacuum annealing at 550 degree(s)C resulted in an increase in the a lattice parameter. The resistivity as a function of temperature showed a significant variation as a function of growth conditions. The peak in the resistivity curve (T_m) varied between 73 and 150 K depending upon the growth conditions. The activation energy associated with the semiconducting phase was approximately the same for all films (approximately 100 meV).

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James S. Horwitz, Paul C. Dorsey, N. C. Koon, M. Rubinstein, J. M. Byers, D. J. Gillespie, Michael S. Osofsky, V. G. Harris, K. S. Grabowski, D. L. Knies, Edward P. Donovan, Randolph E. Treece, and Douglas B. Chrisey "Effect of oxygen deposition pressure and temperature on the structure and properties of pulsed laser-deposited La_0.67Ca_0.33MnO_δ films", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); https://doi.org/10.1117/12.237760

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