Paper
25 March 1996 Laser demonstration of diode-laser-pumped Nd:Sr5(VO4)3F crystal
Shengzhi Zhao, Qingpu Wang, Xingyu Zhang, Lianke Sun, Shaojun Zhang
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Abstract
The absorption spectrum of a new crystal Nd:Sr6(VO4)3F, known as Nd:S-VAP, is measured and its strong absorption peak at 809 nm shows that it can be suitably pumped by laser-diode. By using a laser-diode pump operating at 809 nm, Nd:S-VAP crystal has been successfully lased at 1.065 micrometer. A highest slope efficiency of 43.5% and a lowest laser threshold of only 11 mW have been measured. The theoretical formulas for threshold power and slope efficiency were written, and the theoretical prediction is in agreement with the experimental result.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shengzhi Zhao, Qingpu Wang, Xingyu Zhang, Lianke Sun, and Shaojun Zhang "Laser demonstration of diode-laser-pumped Nd:Sr5(VO4)3F crystal", Proc. SPIE 2698, Solid State Lasers V, (25 March 1996); https://doi.org/10.1117/12.236159
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Cited by 1 scholarly publication.
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KEYWORDS
Crystals

Laser crystals

Semiconductor lasers

Absorption

Radium

Laser damage threshold

Laser resonators

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