Paper
5 July 1996 Heavy holes localization, metal-insulator transition, and superconductivity of HTSC oxides
Aleksander I. Golovashkin, Natalia V. Anshukova, Larisa I. Ivanova, O. T. Maljuchkov, A. P. Rusakov
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Abstract
On the basis of experimental studies of specific heat, magnetic properties and thermal expansion it was shown that dielectric-metal phase transition was the consequence of delocalization of heavy holes located on metal-apical oxygen bonds in the high-temperature superconducting (HTSC) oxide systems. The dielectric gaps in electronic spectrum of the oxide systems appear owing to the charge density waves (CDW) of the ordered arrays of such localized (heavy) holes. The CDW is the microscopic reason of the negative thermal expansion observed in dielectric phases of some HTSC systems. The free carriers introduced in the oxide systems by doping can couple through excitations of these localized holes (local bosons). Such free carriers pairing leads to the high-temperature dependence of Hc2(T). The suggested localized holes on the metal-apical oxygen bonds and local bosons in addition to the usual phonons are the basis for the explanation of the experimental data presented in this report.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aleksander I. Golovashkin, Natalia V. Anshukova, Larisa I. Ivanova, O. T. Maljuchkov, and A. P. Rusakov "Heavy holes localization, metal-insulator transition, and superconductivity of HTSC oxides", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); https://doi.org/10.1117/12.250271
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KEYWORDS
Ions

Oxygen

Doping

Oxides

Phonons

Superconductivity

Bosons

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