Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes

Theodore S. Moise; Yung Chung Kao; Francis G. Celii

doi:10.1117/12.238393

19 April 1996 Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes

Theodore S. Moise, Yung Chung Kao, Francis G. Celii

Proceedings Volume 2694, Quantum Well and Superlattice Physics VI; (1996) https://doi.org/10.1117/12.238393
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Through the use of a vertically-integrated resonant tunneling diode heterostructure, we have examined the impact of lattice-mismatch on the electrical properties of the AlAs/In_0.53Ga_0.47As/InAs resonant tunneling diode (RTD). For strained-layers below the critical thickness, the current-voltage characteristics of the RTD track the bandgap change. In contrast, for strained layers greater than the critical thickness, the current-voltage characteristics are significantly degraded in the case of three-dimensional relaxation, but retain their characteristics in the case of two-dimensional relaxation.

Citation Download Citation

Theodore S. Moise, Yung Chung Kao, and Francis G. Celii "Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); https://doi.org/10.1117/12.238393

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