Bandfilling and bandgap shrinkage in the femtosecond spectroscopyof GaAs

Weizhu Lin; Fei-Peng Pi; Zhong Chen; Yuchuang Chen; Xiangyang Zheng; Tianshu Lai; Dang Mo

doi:10.1117/12.238405

19 April 1996 Band filling and band gap shrinkage in the femtosecond spectroscopy of GaAs

Weizhu Lin, Fei-Peng Pi, Zhong Chen, Yuchuang Chen, Xiangyang Zheng, Tianshu Lai, Dang Mo

Proceedings Volume 2694, Quantum Well and Superlattice Physics VI; (1996) https://doi.org/10.1117/12.238405
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The effects of bandfilling and bandgap shrinkage in the femtosecond absorption saturation measurements of GaAs have been studied using femtosecond pulses generated from CPM dye laser and self-mode-locked Ti:sapphire laser. For exciting photon energy of 2 eV and carriers density of 1 by 10¹⁸ cm^-3, an optical induced absorption increase is observed and is attributed to the bandgap shrinkage. The dependence of the change of absorption coefficient on photon energy, temperature and excited carrier densities is discussed.

Citation Download Citation

Weizhu Lin, Fei-Peng Pi, Zhong Chen, Yuchuang Chen, Xiangyang Zheng, Tianshu Lai, and Dang Mo "Band filling and band gap shrinkage in the femtosecond spectroscopy of GaAs", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); https://doi.org/10.1117/12.238405

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