Paper
29 March 1996 Thermal resistance of etched-pillar vertical-cavity surface-emitting laser diodes
Torsten Wipiejewski, Matthew G. Peters, D. Bruce Young, Brian Thibeault, Gregory A. Fish, Larry A. Coldren
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Abstract
We discuss our measurements on thermal impedance and thermal crosstalk of etched-pillar vertical-cavity lasers and laser arrays. The average thermal conductivity of AlAs-GaAs Bragg reflectors is estimated to be 0.28 W/(cmK) and 0.35W/(cmK) for the transverse and lateral direction, respectively. Lasers with a Au-plated heat spreading layer exhibit a 50% lower thermal impedance compared to standard etched-pillar devices resulting in a significant increase of maximum output power. For an unmounted laser of 64 micrometer diameter we obtain an improvement in output power from 20 mW to 42 mW. The experimental results are compared with a simple analytical model showing the importance of heat sinking for maximizing the output power of vertical-cavity lasers.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Torsten Wipiejewski, Matthew G. Peters, D. Bruce Young, Brian Thibeault, Gregory A. Fish, and Larry A. Coldren "Thermal resistance of etched-pillar vertical-cavity surface-emitting laser diodes", Proc. SPIE 2691, Optoelectronic Packaging, (29 March 1996); https://doi.org/10.1117/12.236919
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Cited by 1 scholarly publication.
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KEYWORDS
Vertical cavity surface emitting lasers

Resistance

Reflectors

Gallium arsenide

Metals

Semiconductor lasers

Laser damage threshold

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