Magnetron plasma etching of SiC for microstructures

Glenn Beheim; Carl Salupo

doi:10.1117/12.236126

25 March 1996 Magnetron plasma etching of SiC for microstructures

Glenn Beheim, Carl Salupo

Proceedings Volume 2686, Integrated Optics and Microstructures III; (1996) https://doi.org/10.1117/12.236126
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Fast means of etching SiC are required for the fabrication of SiC microstructures. Single- crystal 6H-SiC was etched at rates as high as 640 nm/min in a magnetron plasma reactor using a mixture of CHF₃ and O₂. Extremely smooth surfaces were obtained, even for etches of several micrometer depth. At a lower rf power, 50 W instead of 250 W, a 12:1 selectivity with respect to aluminum was demonstrated, with a SiC etch rate of 170 nm/min. These preliminary results show that this approach is potentially a very useful tool for SiC microfabrication.

Citation Download Citation

Glenn Beheim and Carl Salupo "Magnetron plasma etching of SiC for microstructures", Proc. SPIE 2686, Integrated Optics and Microstructures III, (25 March 1996); https://doi.org/10.1117/12.236126

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