Paper
1 April 1996 Mode-locked laser realized by selective area growth for short pulse generation and optical clock recovery in TDM systems
Eugen Lach, Dieter Baums, Jamal Bouayad-Amine, Claudia Hache, Hansjorg Haisch, Edgar Kuhn, Klaus Satzke, Michael Schilling, Juergen Weber, Erich Zielinski
Author Affiliations +
Abstract
We report on monolithically integrated active/passive coupled cavity mode locked lasers for 1.55 micrometer realized by selective area growth technology of InGaAs(P) quantum wells. Mode locked FP or DBR lasers are fabricated with an integrated cavity comprising up to three different band gaps. The devices emit short light pulses at around 10 GHz repetition rate with pulse width down to 8.7 ps. A time-bandwidth product of 0.5 is achieved for mode locked DBR lasers. Active/passive integrated mode locked laser is used for generation of optical 10 GHz clock signal from optical 10 Gb/s PRBS RZ data stream injected into the laser cavity.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugen Lach, Dieter Baums, Jamal Bouayad-Amine, Claudia Hache, Hansjorg Haisch, Edgar Kuhn, Klaus Satzke, Michael Schilling, Juergen Weber, and Erich Zielinski "Mode-locked laser realized by selective area growth for short pulse generation and optical clock recovery in TDM systems", Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); https://doi.org/10.1117/12.236929
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Cited by 5 scholarly publications.
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KEYWORDS
Mode locking

Pulsed laser operation

Picosecond phenomena

Modulation

Quantum wells

Modulators

Clocks

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