High-power high-T0 native oxide stripe-geometry 980-nm laser diodes

Herbert Burkhard; Valeri Piataev; Winfried Schlapp

doi:10.1117/12.237648

12 April 1996 High-power high-T₀ native oxide stripe-geometry 980-nm laser diodes

Herbert Burkhard, Valeri Piataev, Winfried Schlapp

Proceedings Volume 2682, Laser Diodes and Applications II; (1996) https://doi.org/10.1117/12.237648
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

We present results of an experimental investigation of the temperature sensitivity of separate confinement strained InGaAs/GaAs/Al_xGa_1-xAs quantum well single-mode and multimode high power laser diodes (HPLDs). The HPLDs have been fabricated by use of MBE material and a 'wet' thermal oxidation process. Due to the high carrier confinement in the structure with two quantum wells (DQW) and Al-content x greater than 0.7 in the cladding layers an extremely high characteristic temperature T₀ equals 350 K for broad area and T₀ of 400 K around room temperature for single mode HPLDs with extremely low threshold current density were obtained. In spite of the high Al-content in the cladding layers (0.5 less than x less than 0.8) a very high catastrophic optical damage (COD) level (greater than 10 MW/cm²) and lifetimes of more than 10 kh at 100 mW (T equals 50 degrees Celsius) have been observed.

Citation Download Citation

Herbert Burkhard, Valeri Piataev, and Winfried Schlapp "High-power high-T₀ native oxide stripe-geometry 980-nm laser diodes", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); https://doi.org/10.1117/12.237648

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