Spectroscopic method for temperature measurements in active zone of AlxGa1-xAs DQW laser diodes

A. J. Semjonov; B. Kolesov

doi:10.1117/12.226214

3 November 1995 Spectroscopic method for temperature measurements in active zone of Al_xGa_1-xAs DQW laser diodes

A. J. Semjonov, B. Kolesov

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226214
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

A new method for measurement of bulk temperature in the laser diode active zone using the spectral position of the peak gain is offered. The facet and bulk temperatures of a few diodes with output power from 1 to 10 W are measured. The obtained results allow us to conclude that the main reason for bulk temperature increasing is ohmic heating and that exists temperature gradient between facet and bulk temperatures along the active region length.

Citation Download Citation

A. J. Semjonov and B. Kolesov "Spectroscopic method for temperature measurements in active zone of Al_xGa_1-xAs DQW laser diodes", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226214

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