Evidence for the transport-related effects in the photoluminescence from porous silicon

A. M. Evstigneev; A. V. Sachenko; G. A. Sukach; M. A. Evstigneev; Sergey V. Svechnikov

doi:10.1117/12.226201

3 November 1995 Evidence for the transport-related effects in the photoluminescence from porous silicon

A. M. Evstigneev, A. V. Sachenko, G. A. Sukach, M. A. Evstigneev, Sergey V. Svechnikov

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226201
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

The luminescence intensity of porous silicon layers (PSLs) is investigated as a function of their thickness and temperature. For thin PSLs the emission intensity was found to depend superlinearly on thickness and exponentially on temperature. For thick PSLs no rise in emission intensity with lowering temperature is observed. The data obtained suggest that at room and some lower temperatures the photocreated excitons are free to diffuse in PSL and can be rejected into the silicon substrate. This behavior may also explain some recent experimental results. Also in the present work we report on results of combined PL and capacitance measurements which show that, for PSLs formed at small current densities, the distance between pore centers is, within the experimental uncertainties, the same as that between fluorine ions in the Helmholtz layer. This allows us to conclude that in the region of weak anodic polarizations every fluorine ion gives rise to the growth of individual pore.

Citation Download Citation

A. M. Evstigneev, A. V. Sachenko, G. A. Sukach, M. A. Evstigneev, and Sergey V. Svechnikov "Evidence for the transport-related effects in the photoluminescence from porous silicon", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226201

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