On-line exhaust gas analytics during plasma cleaning of PECVD facilities

Andreas E. Guber; Uwe Koehler

doi:10.1117/12.221310

19 September 1995 On-line exhaust gas analytics during plasma cleaning of PECVD facilities

Andreas E. Guber, Uwe Koehler

Proceedings Volume 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing; (1995) https://doi.org/10.1117/12.221310
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

The etching gases usually applied for plasma supported gas phase cleaning of PECVD facilities, i.e. CF₄ SF₆ and NF₃, were checked for their efficiency with regard to silicon containing layers. Even less known etching gases such as ClF₃ or pure fluorine were tested. NF₃ has the highest etching rate. The etching rates of F₂ and ClF₃ are only slightly worse. For the first time, etching gas mixtures of CBrF₃/F₂ and NF₃/F₂ were studied. The exhaust gases produced were subjected to online FTIR spectroscopy and evaluated according to their hazards and operator exposure limits. Possible partial recycling of the exhaust gases is discussed.

Citation Download Citation

Andreas E. Guber and Uwe Koehler "On-line exhaust gas analytics during plasma cleaning of PECVD facilities", Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); https://doi.org/10.1117/12.221310

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