Dependence of MOSFET hot-carrier aging on PECVD oxide process

L. K. Han; D. Allman; Dim-Lee Kwong

doi:10.1117/12.221144

15 September 1995 Dependence of MOSFET hot-carrier aging on PECVD oxide process

L. K. Han, D. Allman, Dim-Lee Kwong

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221144
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

This paper studies the effect of PECVD oxide process in the sandwiched SOG structure for interlevel dielectric applications on MOSFET hot- carrier reliability. Both silane-based oxide (OX) and tetraethylorthosilicate-based oxide (TEOS) were used to form various combinations with SOG as interlevel dielectrics. The influence of N₂O (N₂O-TEOS) and O₂ (O₂-TEOS) as the source gas of oxygen during the PECVD TEOS deposition was also studied. Results indicate that O₂-TEOS/SOG/O₂-TEOS increased the number of electron traps in the gate oxide and deteriorate SiO₂/Si interface characteristics, thus reducing device lifetime. In addition, the use of OX to replace any one of the O₂-TEOS layers improves hot-carrier immunity considerably. Finally, N₂-TEOS/SOG/OX is shown to be a very promising process due to its conformal nature over OX/SOG/OX and improved reliability over O₂-TEOS/SOG/OX.

Citation Download Citation

L. K. Han, D. Allman, and Dim-Lee Kwong "Dependence of MOSFET hot-carrier aging on PECVD oxide process", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221144

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