Process-induced damage to SRAM poly-load resistance during photoresist ashing in H2O plasma

Kuang-Hui Chang; Y. C. Huang; Ting-Huang Lin; Chaur-Rong Chang

doi:10.1117/12.221457

22 September 1995 Process-induced damage to SRAM poly-load resistance during photoresist ashing in H₂O plasma

Kuang-Hui Chang, Y. C. Huang, Ting-Huang Lin, Chaur-Rong Chang

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221457
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Process-induced damage to SRAM poly-load resistance have been clearly observed during photoresist ashing in an H₂O plasma which is commonly acknowledged as an effective corrosion-prevented treatment after metal etching in a chlorine-rich environment. The resistance degraded to about three order in the H₂O plasma than in the conventional O₂ plasma. Different ratios of H₂O to O₂ plasma have been studied by using the well-designed pattern to understand the basic mechanisms of the problems which occurred in the photoresist ashing process. Experimental results showed that the higher concentration of H₂O, the more damage to the SRAM products, resulting in the lower resistance of poly-load. Hydrogen ions generated from H₂O plasma are speculated to be the major culprit. Different types of plasma sources (microwave and inductively coupled plasmas) for H₂O-plasma photoresist ashing process have also been investigated and found that the damage effects to SRAM poly-load resistance in the inductive-type plasma source (such as Transformer Coupled Plasma) is more severe than that in the microwave-type plasma at the similar operation conditions. This may because inductive-type plasma has higher degree of ionization which generated more hydrogen ions inside the H₂O plasma.

Citation Download Citation

Kuang-Hui Chang, Y. C. Huang, Ting-Huang Lin, and Chaur-Rong Chang "Process-induced damage to SRAM poly-load resistance during photoresist ashing in H₂O plasma", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221457

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