Particle contamination within the tungsten etch back chamber

Po-Tao Chu; Kuang-Hui Chang; Tzu-Min Peng; Chao-Hsin Chang; Shih-Why Yen; Ting-hwang Lin; Chaur-Rong Chang

doi:10.1117/12.221462

22 September 1995 Particle contamination within the tungsten etch back chamber

Po-Tao Chu, Kuang-Hui Chang, Tzu-Min Peng, Chao-Hsin Chang, Shih-Why Yen, Ting-hwang Lin, Chaur-Rong Chang

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221462
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Low yield of dies near the wafer flat edge were observed for the production wafers with tungsten plug structures. All these low yield lots were processed in the specific tungsten etch back etcher (LAM RAINBOW 4720 etcher) and the total yield drop is approximately 30%. The precision cut cross section SEM picture and KLA scanning result indicate the low yield is caused by the particles fallen on the wafer surfaces during and after the tungsten etch back process. The FTIR techniques were utilized to analyze the particle contents. The particle source had been identified to be originated from the thermal degradation and recombination of the grease applied around the gap housing quad seal region in the RAINBOW 4720 etcher. The temperature near the gap housing is 15 degree(s)C higher than the set point. The high temperature environment increase the degradation and recombination reaction rate for the grease and thus generate enormous amount of particles in the etching chamber.

Citation Download Citation

Po-Tao Chu, Kuang-Hui Chang, Tzu-Min Peng, Chao-Hsin Chang, Shih-Why Yen, Ting-hwang Lin, and Chaur-Rong Chang "Particle contamination within the tungsten etch back chamber", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221462

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