Consideration of chemical bond configurations for radiation-hard UHV ECR-CVD SiNx x-ray mask membrane

Jinho Ahn; Katsumi Suzuki; Shinji Tsuboi; Yoshio Yamashita

doi:10.1117/12.212758

3 July 1995 Consideration of chemical-bond configurations for radiation-hard UHV ECR-CVD SiN_x x-ray mask membrane

Jinho Ahn, Katsumi Suzuki, Shinji Tsuboi, Yoshio Yamashita

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212758
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

In this paper, the chemical study on the radiation-hard silicon nitride X-ray mask membrane prepared by an ultrahigh-vacuum electron cyclotron resonance chemical vapor deposition is presented. Silicon nitride film with higher nitrogen content showed a degraded radiation-stability. It is speculated that the higher electronegativity and the stress induced by smaller covalent radius of nearest-neighbor nitrogen atoms weakens the Si-H bonds, which is the most possible source of radiation-induced damage. Increases in silicon content in silicon nitride film is supposed to result in an improvement in the radiation stability through the modification in the bandgap structure and the microscopic bond configurations.

Citation Download Citation

Jinho Ahn, Katsumi Suzuki, Shinji Tsuboi, and Yoshio Yamashita "Consideration of chemical-bond configurations for radiation-hard UHV ECR-CVD SiN_x x-ray mask membrane", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212758

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