Photonic excitations in doped bismuth silicon oxide: Bi12SiO20

Steven P. Hotaling

doi:10.1117/12.212717

30 June 1995 Photonic excitations in doped bismuth silicon oxide: Bi₁₂SiO₂₀

Steven P. Hotaling

Proceedings Volume 2481, Photonic Device Engineering for Dual-Use Applications; (1995) https://doi.org/10.1117/12.212717
Event: SPIE's 1995 Symposium on OE/Aerospace Sensing and Dual Use Photonics, 1995, Orlando, FL, United States

Abstract

Photonic excitations of the electronic spin system in doped sillenite phase Bismuth Silicon Oxide (BSO) Bi₁₂SiO₂₀ are presented. Dynamic metastability is explained using a Two Level system (TLS) model for photonic perturbation of the spin Hamiltonian.

Citation Download Citation

Steven P. Hotaling "Photonic excitations in doped bismuth silicon oxide: Bi₁₂SiO₂₀", Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995); https://doi.org/10.1117/12.212717

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