Paper
26 May 1995 Practical evaluation of optical-proximity effect correction by EDM methodology
Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, Satoru Nozawa
Author Affiliations +
Abstract
Practical evaluation method for optical proximity effect correction (OPC) feasibility is newly proposed using EDM (Exposure-Defocus and Mask fabrication latitude) methodology. In this method, printed image on a wafer is characterized by process latitude functions derived from EDM methodology in terms of exposure latitude, depth of focus, and mask line width latitude. In this paper, effectiveness of the process latitude functions will be verified by applying them to intraproximity effect evaluation for isolated lines and angled lines, and also to interproximity effect evaluation for T-shaped patterns and lines & spaces (L/S) patterns in i-line lithography.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, and Satoru Nozawa "Practical evaluation of optical-proximity effect correction by EDM methodology", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209253
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Optical proximity correction

Photomasks

Image processing

Reticles

Lithography

Semiconducting wafers

Opacity

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