Optical lithography technique with dummy diffraction mask for 0.20 um T-shaped gate formation

Byung-Sun Park; Yong-Ho Oh; Sang-Soo Choi; Hai Bin Chung; Hyung Joun Yoo

doi:10.1117/12.209310

26 May 1995 Optical lithography technique with dummy diffraction mask for 0.20 um T-shaped gate formation

Byung-Sun Park, Yong-Ho Oh, Sang-Soo Choi, Hai Bin Chung, Hyung Joun Yoo

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209310
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

An optical lithography technique for the formation of T-shaped gate metal with narrow (sub 0.25 micrometers ) channel length, was studied. A special photomask known as the dummy diffraction mask was used to form a T-shaped resist profile by single exposure and development process steps. The sub 0.25 micrometers T-shaped gate metal could be easily obtained with i-line stepper (N.A. 0.4) under ordinary lithographic process conditions and the process margins were found to be enough for the application of device fabrication.

Citation Download Citation

Byung-Sun Park, Yong-Ho Oh, Sang-Soo Choi, Hai Bin Chung, and Hyung Joun Yoo "Optical lithography technique with dummy diffraction mask for 0.20 um T-shaped gate formation", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209310

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