Efficient 3D phase-shifting mask lithography simulation

Kevin D. Lucas; Andrzej J. Strojwas; Hiroyoshi Tanabe

doi:10.1117/12.209273

26 May 1995 Efficient 3D phase-shifting mask lithography simulation

Kevin D. Lucas, Andrzej J. Strojwas, Hiroyoshi Tanabe

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209273
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Rigorous simulation has been shown to be useful for predicting complicated effects in the optical lithography process. Rigorous simulation models are necessary for accurately predicting behavior from non planar mask and substrate structures and for non-vertical light propagation. As previously shown[l], the benefits of 2D rigorous lithography simulation are many, however, these models are inherently limited. 2D models are not general enough to model contact openings, corners, 3D defect structures or off-axis illumina tion systems. These are important issues in lithography today and require true 3D simulation to help analyze them.

Citation Download Citation

Kevin D. Lucas, Andrzej J. Strojwas, and Hiroyoshi Tanabe "Efficient 3D phase-shifting mask lithography simulation", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209273

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