0.35-um i-line poly processing with a bottom antireflective coating (BARC)

William L. Krisa; Cesar M. Garza Sr.; J. A. McKee

doi:10.1117/12.209291

26 May 1995 0.35-um i-line poly processing with a bottom antireflective coating (BARC)

William L. Krisa, Cesar M. Garza Sr., J. A. McKee

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209291
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The manufacturing of high performance integrated circuits requires tight control of critical dimensions (CD) at poly pattern. Achieving these CD requirements forces process engineers to eliminate linewidth variation caused by reflective notching and thin film effects. Implementation of a bottom antireflective coating (BARC) can reduce or eliminate linewidth variations caused by reflective notching and thin film effects. With the additional process complexity, a number of issues must be resolved to obtain the true benefits of using a BARC material. The following paper discusses the characterization of a commercially available BARC material for 0.35 micrometers i-line poly patterning. Initial characterization of gratings and isolated lines on flat poly test wafers shows the resist process with BARC to have equal and in some cases better process capability compared to a conventional resist process. An 800 angstrom BARC film thickness on flat silicon wafers reduces the amplitude of the resist swing curve by 75%. On topography wafers an 800 angstrom BARC thickness eliminates reflective notching although for some small feature sizes, thin film effects still cause linewidth nonuniformity. Evaluations of BARC thicknesses ranging from 800 angstrom to 2,400 angstrom demonstrate the capability of the BARC to eliminate the swing effect in the resist by optimization of the BARC thickness. Cross sections of the resist profiles before and after etch demonstrate the ability for a repeatable pattern transfer. Wafer-to-wafer data and lot- to-lot data show the successful development of an etch process with a 0.03 micrometers bias. The data presented demonstrates the implementation of an optimized BARC process enhances the CD control capability at poly patterning for 0.35 micrometers i-line processing.

Citation Download Citation

William L. Krisa, Cesar M. Garza Sr., and J. A. McKee "0.35-um i-line poly processing with a bottom antireflective coating (BARC)", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209291

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconducting wafers

Etching

Photoresist processing

Reflectivity

Thin films

Critical dimension metrology

Wafer testing

Show All Keywords

Keywords/Phrases

Search In:

Publication Years