Paper
16 October 1995 Scope of the low-temperature growth of bulk II-VI compounds
Robert Triboulet
Author Affiliations +
Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224953
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
Some difficulties in the melt-growth of II-VI compounds are clarified within a comparison between the properties of some II-VI and III-V compounds. Some specificities of the phase diagrams of both families of compounds, liquidus shape, width of the homogeneity range, existence of phase transitions in the solid state, and properties in solid, liquid and gaseous states, are related to the different characteristics of the compounds, and mainly to their chemical bond. Contamination from the environment is also shown to occur at high temperature, as illustrated in the CdTe case. The consequences of these factors on the crystal growth are analyzed, making attractive the use of low temperature growth. Solution and vapor growth are shown to present some limitations. Solid state recrystallization is presented as an attractive alternative and illustrated in the ZnSe case, for which very pure and perfect crystals are obtained, as assessed from photoluminescence and x-ray diffraction measurements.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Triboulet "Scope of the low-temperature growth of bulk II-VI compounds", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224953
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Crystals

Solid state physics

X-ray diffraction

X-rays

Gallium arsenide

Contamination

Solid state electronics

Back to Top