Strain effects and band offset control of GaxIn1-xAs/AlyIn1-yAs quantum wells

Ming Qi; Aizhen Li

doi:10.1117/12.190771

26 October 1994 Strain effects and band offset control of Ga_xIn_1-xAs/Al_yIn_1-yAs quantum wells

Ming Qi, Aizhen Li

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190771
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

The strain effects on GaInAs/AlInAs quantum wells grown on InP substrates were studied theoretically. Three structures, i.e., Ga_xIn_1-xAs/Al_0.48Ga_0.52As, Ga_0.47In_0.53As/Al_yIn_1-yAs and Ga_xIn_1-xAs/Al_yIn_1-yAs were analyzed. It was shown that the band alignments for the strained structures change obviously compared with the unstrained case. The type-I and type-II band lineups can be formed respectively for the heavy-hole and light-hole valence subbands. The strain effect on the band discontinuities give a possibility to control the band offset for Ga_xIn_1-xAs/Al_yIn_1-yAs quantum well structures by using the strained layers.

Citation Download Citation

Ming Qi and Aizhen Li "Strain effects and band offset control of Ga_xIn_1-xAs/Al_yIn_1-yAs quantum wells", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190771

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