Photo-enhanced MOCVD of Pb(Zr,Ti)O3 thin films using O3

Masaru Shimizu; Masataka Sugiyama; Hironori Fujisawa; Tadashi Shiosaki

doi:10.1117/12.190806

26 October 1994 Photo-enhanced MOCVD of Pb(Zr,Ti)O₃ thin films using O₃

Masaru Shimizu, Masataka Sugiyama, Hironori Fujisawa, Tadashi Shiosaki

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190806
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Effects of O₃ on the growth and electrical properties of Pb(Zr,Ti)O₃ (PZT) thin films grown by photoenhanced metalorganic chemical vapor deposition (MOCVD) were investigated. Ferroelectric PZT films were obtained by both MOCVD and photoenhanced MOCVD using (₃ at substrate temperatures higher than 560 degree(s)C. The crystalline orientation, growth rate and growth temperature were scarcely influenced by the use of O₃ and photoirradiation. However, in the leakage current characteristics, an improvement in breakdown voltage by the use of O₃ and photoirradiation was observed. From SEM observations, it was found that this improvement may be caused by the microscopic change in film structure.

Citation Download Citation

Masaru Shimizu, Masataka Sugiyama, Hironori Fujisawa, and Tadashi Shiosaki "Photo-enhanced MOCVD of Pb(Zr,Ti)O₃ thin films using O₃", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190806

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