Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy

X. Y. Gong; Tomuo Yamaguchi; Hirofumi Kan; Toshihiko Makino; T. Nakatsukasa; Y. Kaneko; Makoto Aoyama; Nelson L. Rowell; A. G. Wang; R. Rinfret

doi:10.1117/12.190759

26 October 1994 Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy

X. Y. Gong, Tomuo Yamaguchi, Hirofumi Kan, Toshihiko Makino, T. Nakatsukasa, Y. Kaneko, Makoto Aoyama, Nelson L. Rowell, A. G. Wang, R. Rinfret

Author Affiliations +

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190759
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

(Ga_1-x)In_xAs_1-ySb_y/InAs multilayers with cut off wavelength longer than 6 micrometers have been grown by Gd-doped step cooling liquid phase epitaxy (LPE) between 530 and 460 degree(s)C. The optical properties of epilayers were characterized by FTIR transmission measurement, photoluminescence (PL), Raman spectroscopy and spectro- ellipsometry. The results showed that InAsSb epilayers have high purity, and good homogenity. Photodetectors were fabricated using this material. A room temperature dark current near 1 mA at -0.5 V has been obtained.

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X. Y. Gong, Tomuo Yamaguchi, Hirofumi Kan, Toshihiko Makino, T. Nakatsukasa, Y. Kaneko, Makoto Aoyama, Nelson L. Rowell, A. G. Wang, and R. Rinfret "Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190759

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