Paper
26 October 1994 Novel absorption line shape induced by Tamm states in a finite-length GaAs/AlGaAs superlattice
Roger H. Yu
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190752
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The absorption coefficient is calculated using the density-density response function (chi) (q(parallel),(omega) ;z,z'). The surface localized Tamm states yield an extra peak in the spectrum. The Coulomb interaction among the electrons shifts the resonant energy upward, changes the line shape, and leaves a weak but well-defined structure behind.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roger H. Yu "Novel absorption line shape induced by Tamm states in a finite-length GaAs/AlGaAs superlattice", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190752
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KEYWORDS
Absorption

Superlattices

Electrons

Stereolithography

Modulation

Transition metals

Astatine

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