Luminescent Si quantum dots films: preparation and characterization

Kun-Ji Chen; Xinfan Huang; Maorui Chen; Weihua Shi; Zhifeng Li; Duan Feng

doi:10.1117/12.190736

26 October 1994 Luminescent Si quantum dots films: preparation and characterization

Kun-Ji Chen, Xinfan Huang, Maorui Chen, Weihua Shi, Zhifeng Li, Duan Feng

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190736
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

We report two kinds of method for preparing luminescent silicon films with quantum crystallites (QCs) structures: (1) Using laser annealing technique to crystallize ultrathin amorphous silicon layers which were constructed in a-Si:H/a-SiN_x:H multiquantum well (MQW) structures. (2) Applying the layer-by-layer deposition technique to the growth of silicon QCs by varying the hydrogen plasma exposure time. The novel structures of these two types of QCs films were characterized by X-ray diffraction and Raman scattering spectroscopy. The room temperature visible photoluminescence (PL) from Si QCs with size of 4 nm or less has been observed in most of samples.

Citation Download Citation

Kun-Ji Chen, Xinfan Huang, Maorui Chen, Weihua Shi, Zhifeng Li, and Duan Feng "Luminescent Si quantum dots films: preparation and characterization", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190736

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