Growth and some properties of AlxIn1-xN crystalline thin films

Qixin Guo; Hiroshi Ogawa; Akira Yoshida

doi:10.1117/12.190782

26 October 1994 Growth and some properties of Al_xIn_1-xN crystalline thin films

Qixin Guo, Hiroshi Ogawa, Akira Yoshida

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190782
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Al_xIn_1-xN thin films have been fabricated on (0001) oriented (alpha) --Al₂O₃ sapphire substrates by microwave- excited metalorganic vapor phase epitaxy. The properties of the films have been studied by the reflection high-energy electron diffraction technique, x-ray diffraction, and optical measurements. At growth temperature of 600 degree(s)C, single crystalline layers of Al_xIn_1-xN were obtained for the first time. The fundamental absorption edge of the Al_xIn_1-xN film varies continuously with composition.

Citation Download Citation

Qixin Guo, Hiroshi Ogawa, and Akira Yoshida "Growth and some properties of Al_xIn_1-xN crystalline thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190782

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