Paper
26 October 1994 Epitaxial CoSi2 film grown on Si substrate by solid interaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer
Wei-Jun Wu, Bing-Zong Li, Kai Shao, Z. Sun, Zhi Guang Gu, Wei-Ning Huang, Guo Bao Jiang, Ping Liu, Zu Yao Zhou
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190809
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
CoSi2 is being investigated intensively for microelectronics application recently. In this paper a new method of growing an epitaxial CoSi2 film by solid state reaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer is described. The variation of structure and sheet resistance of the film with thermal annealing temperature and time has bee investigated. The kinetics and mechanism of the CoSi2 solid-state epitaxy are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei-Jun Wu, Bing-Zong Li, Kai Shao, Z. Sun, Zhi Guang Gu, Wei-Ning Huang, Guo Bao Jiang, Ping Liu, and Zu Yao Zhou "Epitaxial CoSi2 film grown on Si substrate by solid interaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190809
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Annealing

Multilayers

Resistance

Sputter deposition

Solid state electronics

Solid state physics

Back to Top