Optical degradation of II-VI devices and heterostructures

Greg Meis Haugen; Supratik Guha; Jim M. DePuydt; Michael A. Haase; Kwok Keung Law; Thomas J. Miller; Bor-Jen Wu

doi:10.1117/12.197262

21 December 1994 Optical degradation of II-VI devices and heterostructures

Greg Meis Haugen, Supratik Guha, Jim M. DePuydt, Michael A. Haase, Kwok Keung Law, Thomas J. Miller, Bor-Jen Wu

Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197262
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

We report the use of photoluminescence imaging as a quick and effective method for determining defect densities and giving insight into degradation mechanisms in II-VI Cd_xZn_1-xSe quantum well devices and heterostructures grown on GaAs. From our use of photoluminescence imaging we have observed that the device lifetimes are dependent on the stacking fault density. The stacking faults serve as nonradiative recombination centers that generate the dark line defects. In our studies, degradation rates were found to be independent of chlorine doping, barrier material, and the removal of the GaAs substrate.

Citation Download Citation

Greg Meis Haugen, Supratik Guha, Jim M. DePuydt, Michael A. Haase, Kwok Keung Law, Thomas J. Miller, and Bor-Jen Wu "Optical degradation of II-VI devices and heterostructures", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197262

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