Characterization of polycrystalline silicon grain boundary structures by optical second harmonic generation

Chun Hu; Truc Q. Vu; Guann-pyng Li

doi:10.1117/12.186633

14 September 1994 Characterization of polycrystalline silicon grain boundary structures by optical second harmonic generation

Chun Hu, Truc Q. Vu, Guann-pyng Li

Author Affiliations +

Proceedings Volume 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing; (1994) https://doi.org/10.1117/12.186633
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Grain boundary contributions to optical second harmonic generation from polycrystalline silicon samples have been investigated. An extremely high second harmonic signal, oppose to that from the single crystal silicon samples, was observed in undoped poly-Si samples. The high intensity of SHG signal is attributed tot he nonlinear susceptibility modulated by the electric-dipole contribution of dangling bonds at grain boundaries. This explanation is confirmed by the dependence of SHG signal on polysilicon processed with hydrogen plasma treatment and high temperature annealing. The effect of dopant segregation at grain boundaries on the SHG has been investigated on different grain structures.

Citation Download Citation

Chun Hu, Truc Q. Vu, and Guann-pyng Li "Characterization of polycrystalline silicon grain boundary structures by optical second harmonic generation", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); https://doi.org/10.1117/12.186633

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