Paper
9 September 1994 Planarization using chemical mechanical planarization (CMP) on a 16-megabit SRAM with quadruple polysilicon stacks
Kathleen A. Perry, Sandya Radhakrishna, Craig Lage, Franklin Nkansah, Victor Pol, Thom Kobayashi, Jeff P. West, Phil Crabtree
Author Affiliations +
Abstract
Chemical mechanical planarization (CMP) has been used to fabricate a 0.35 micrometers 16 Meg SRAM with quadruple polysilicon stacks. The use of CMP results in complete planarization of over one micron of topography. CMP planarization results in improved photolithography depth of field when compared to standard resist etchback planarization (REB). Data from a lot processed using CMP at contact dielectric and interlayer dielectric is compared to a lot that was processed using standard REB for planarization.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kathleen A. Perry, Sandya Radhakrishna, Craig Lage, Franklin Nkansah, Victor Pol, Thom Kobayashi, Jeff P. West, and Phil Crabtree "Planarization using chemical mechanical planarization (CMP) on a 16-megabit SRAM with quadruple polysilicon stacks", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186054
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KEYWORDS
Chemical mechanical planarization

Dielectrics

Semiconducting wafers

Manufacturing

Metals

Lithography

Optical lithography

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