Paper
21 October 1994 Bulk silicon micromachining for the scanning thermal profiler and other applications
Yogesh B. Gianchandani, Khalil Najafi
Author Affiliations +
Abstract
It has previously been shown that bulk silicon micromachining using a dissolved wafer process with an impurity based etch stop can be used to fabricate structures with variable thickness, high (thickness-to- width) aspect ratios, and overhanging features, as well as structures with multiple stacked levels. This technology has been further extended in the development of silicon micromachined thermal profilers (SMTPs). The SMTP consists of a polysilicon-gold thermocouple located at the tip of a probe shank that overhangs the edge of the substrate. The probe shank is suspended by flexible beams, and can be electrostatically excited into motion by comb drives. A polysilicon heater is built into the base of the shank to provide a thermal bias. As the thermocouple is scanned across a sample, the varying proximity and temperature of features on the sample surface can be mapped as a function of position, providing high resolution topographic and thermographic information. The same principle can also be used in photothermal absorption spectroscopy, microelectronic metrology, and microflow measurements. Advanced versions of the SMTP suspend the thermocouple on a dielectric diaphragm for improved thermal isolation, and replace it with a thermopile for a larger readout signal. Devices have been fabricated using an IC-compatible, 8 mask, single-sided process that has general applicability beyond the SMTP. Preliminary data from test scans is presented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yogesh B. Gianchandani and Khalil Najafi "Bulk silicon micromachining for the scanning thermal profiler and other applications", Proc. SPIE 2291, Integrated Optics and Microstructures II, (21 October 1994); https://doi.org/10.1117/12.190930
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Cited by 3 scholarly publications.
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KEYWORDS
Silicon

Semiconducting wafers

Glasses

Metals

Etching

Reactive ion etching

Oxides

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